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Characterisation of disorder in semiconductors via single-photon interferometry.

Bozsoki, P. and Thomas, P. and Kira, M. and Hoyer, W. and Meier, T. and Koch, S. W. and Maschke, K. and Varga, I. and Stolz, H. (2006) Characterisation of disorder in semiconductors via single-photon interferometry. Physical Review Letters, 97 (22). 227402 (4 pages).

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Abstract

The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.

Item Type: Article
Journal or Publication Title: Physical Review Letters
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 8742
Deposited By: Mr Michael Dunne
Deposited On: 10 May 2008 14:49
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:26
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/8742

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