Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

Lu, Qi and Zhuang, Qiandong and Krier, Anthony (2015) Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers. Photonics, 2 (2). pp. 414-425. ISSN 2304-6732

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Abstract

In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 μm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm−1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

Item Type:
Journal Article
Journal or Publication Title:
Photonics
Additional Information:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Subjects:
?? QUANTUM DOTSMID-INFRAREDSEMICONDUCTOR LASERS ??
ID Code:
73648
Deposited By:
Deposited On:
18 Jun 2015 05:39
Refereed?:
Yes
Published?:
Published
Last Modified:
21 Sep 2023 01:50