Lancaster EPrints

Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density .

Robinson, John P. and Schomerus, Henning (2007) Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density . Physical Review B, 76. p. 115430.

[img]
Preview
PDF (000249786400121.pdf)
Download (932Kb) | Preview

    Abstract

    We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating behavior even when the charge-carrier density in the graphene part is finite. This effect originates in the different k intervals supporting propagating modes in graphene and a normal conductor, and persists for moderate levels of bulk, edge, or interface disorder. The ensuing conductance thresholds could be used as an electronic tool to map out details of the graphene band structure in absolute k space.

    Item Type: Article
    Journal or Publication Title: Physical Review B
    Subjects: UNSPECIFIED
    Departments: Faculty of Science and Technology > Physics
    ID Code: 663
    Deposited By: Dr Henning Schomerus
    Deposited On: 31 Oct 2007
    Refereed?: Yes
    Published?: Published
    Last Modified: 26 Jul 2012 18:16
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/663

    Actions (login required)

    View Item