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Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes

Aziz, A and Smith, CG and Winiecki, GP and Beere, HE and Ritchie, DA (2003) Two processing techniques to sandwich a 100 nm GaAs layer between ferromagnetic metallic electrodes. Journal of Vacuum Science and Technology B, 21 (4). pp. 1449-1452. ISSN 1071-1023

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Abstract

We report two processing techniques to sandwich a thin (tens of nanometers) GaAs layer between ferromagnetic metallic electrodes. Such devices are valuable in the study of the spin properties of electrons in semiconductors. In these processes an AlAs layer is selectively etched from underneath a GaAs/NiFe/Au heterostructure using hydrofluoric acid. Subsequently, the rest of the structure which comprises GaAs/NiFe/Au is inverted in such a way that the GaAs layer lies on the top of the NiFe layer. The mean roughness of the inverted GaAs surface is 1.2 nm and it is crack free. In the first process, structures with an area of tens of microns are inverted on the same chip. In the second process, small disks with an area of a few microns are inverted on a different host chip. (C) 2003 American Vacuum Society.

Item Type: Article
Journal or Publication Title: Journal of Vacuum Science and Technology B
Uncontrolled Keywords: INJECTION
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 63548
Deposited By: ep_importer_pure
Deposited On: 19 Apr 2013 11:45
Refereed?: Yes
Published?: Published
Last Modified: 21 Sep 2017 05:32
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/63548

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