Krier, A. and de la Mare, M. and Carrington, P. J. and Thompson, M. and Zhuang, Q. and Patane, A. and Kudrawiec, R. (2012) Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27 (9). ISSN 0268-1242
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Official URL: https://doi.org/10.1088/0268-1242/27/9/094009
Abstract
The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.
Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
?? INASNBAND-STRUCTUREPHOTOLUMINESCENCESPECTROSCOPYOPTICAL-PROPERTIESMOLECULAR-BEAM EPITAXYGAAS(001)MBE GROWTHNITROGENALLOYSMATERIALS CHEMISTRYELECTRONIC, OPTICAL AND MAGNETIC MATERIALSELECTRICAL AND ELECTRONIC ENGINEERINGCONDENSED MATTER PHYSICS ??
Departments:
ID Code:
62324
Deposited By:
Deposited On:
13 Feb 2013 15:55
Refereed?:
Yes
Published?:
Published
Last Modified:
17 Sep 2023 01:17