Evans, P. G. and Savage, D. E. and Prance, J. R. and Simmons, C. B. and Lagally, M. G. and Coppersmith, S. N. and Eriksson, M. A. and Schuelli, T. U. (2012) Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures. Advanced Materials, 24 (38). pp. 5217-5221. ISSN 0935-9648Full text not available from this repository.
Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.
|Journal or Publication Title:||Advanced Materials|
|Uncontrolled Keywords:||Si/SiGe strained quantum wells ; synchrotron X-ray nanodiffraction ; structural distortions ; thickness and strain variations|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||26 Oct 2012 14:44|
|Last Modified:||17 Sep 2013 08:43|
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