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Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures

Evans, P. G. and Savage, D. E. and Prance, J. R. and Simmons, C. B. and Lagally, M. G. and Coppersmith, S. N. and Eriksson, M. A. and Schuelli, T. U. (2012) Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures. Advanced Materials, 24 (38). pp. 5217-5221. ISSN 0935-9648

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Abstract

Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature.

Item Type: Article
Journal or Publication Title: Advanced Materials
Uncontrolled Keywords: Si/SiGe strained quantum wells ; synchrotron X-ray nanodiffraction ; structural distortions ; thickness and strain variations
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 59550
Deposited By: ep_importer_pure
Deposited On: 26 Oct 2012 14:44
Refereed?: Yes
Published?: Published
Last Modified: 17 Sep 2013 08:43
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/59550

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