Adamopoulos, George and Peng, X.L. and Clyne, T.W. and Batchelder, D.N. and Buckley, A. (2002) Etching of CVD Diamond Films Using Different Techniques. In: E-MRS Spring Meeting 2002 June 18 - 21, 2002 SYMPOSIUM K Thin Film Materials for Large Area Electronics. UNSPECIFIED, K30.Full text not available from this repository.
Diamond films with a thickness ranging from 5 to 10 μm have been deposited on Si(100) substrates using hot filament CVD from a CH4-H2 mixture. These diamond films have been etched via plasmas generated from H2, O2, Ar and CF4 as well as via diffusion etching using transition metals, such as Co and Mn. It was found that CVD diamond is very resistant towards Ar and CF4 plasmas, while H2, O2 plasma are more aggressive towards diamond through chemical reaction between carbon and atomic hydrogen and oxygen. Columnar structure was formed after O2 plasma etching, while H2 plasma resulted in anisotropic diamond etching. Diamond etching via diffusion reaction with transition metals was not effective.
|Item Type:||Contribution in Book/Report/Proceedings|
|Departments:||Faculty of Science and Technology > Engineering|
|Deposited On:||23 Nov 2012 13:38|
|Last Modified:||10 Apr 2014 01:43|
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