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Very low field electron emission from hot filament CVD grown microcrystalline diamond

Satyanarayana, B.S. and Peng, X.L. and Adamopoulos, George and Robertson, J. and Milne, W.I. and Clyne, T.W. (2000) Very low field electron emission from hot filament CVD grown microcrystalline diamond. Materials Research Society Symposium Proceedings, 621. Q531-Q537. ISSN 0272-9172

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Abstract

Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH4) / hydrogen (H2) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/μm to 1 V/μm for an emission current density of 1 μA/cm2. A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼104-105/cm2 at an applied field of 3 V/μm.

Item Type: Article
Journal or Publication Title: Materials Research Society Symposium Proceedings
Uncontrolled Keywords: Chemical vapor deposition ; Concentration (process) ; Current density ; Electron emission ; Film growth ; Polycrystalline materials ; Hot filaments ; Diamond films
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Departments: Faculty of Science and Technology > Engineering
ID Code: 58588
Deposited By: ep_importer_pure
Deposited On: 30 Oct 2012 14:36
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:33
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/58588

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