ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas

Adamopoulos, George and Godet, C. and Drévillon, B. and Saito, Y. and Batchelder, D.N. and Grosman, A. and Ortega, C. (2003) ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas. Diamond and Related Materials, 12 (3-7). pp. 983-987. ISSN 0925-9635

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Abstract

A series of hydrogenated amorphous carbon films have been grown from acetylene-oxygen mixtures using an Integrated Distributed Electron Cyclotron Resonance plasma reactor varying the relative precursor gases' ratio. The films were characterised by spectroscopic ellipsometry (SE), Nuclear Reaction Analysis (NRA) and visible Raman spectroscopy. It has been found that the increase of the oxygen's partial pressure (for a given acetylene pressure of 1 mT) results in a decrease of the deposition rate as well as a monotonic increase of the oxygen fraction up to 20% for a gas ratio (O-2/C2H2) = 1. Precisely, the increase of the oxygen's partial pressure is followed by a slight decrease of the optical band gap (namely the Tauc gap and the E-04 gap) and the films' density. The parameters of the Raman spectra (intensity ratio of D and G bands, the position and the FWHM of the G band) move towards values characteristic of sp(2) bonding denoting that oxygen incorporation dominates the etching of the sp(2) phase.

Item Type:
Journal Article
Journal or Publication Title:
Diamond and Related Materials
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/ta
Subjects:
?? ECR DEPOSITIONHYDROGENATED AMORPHOUS CARBONRAMAN SPECTROSCOPYSPECTROSCOPIC ELLIPSOMETRYENGINEERINGMATERIALS CHEMISTRYPHYSICS AND ASTRONOMY(ALL)CHEMISTRY(ALL)MECHANICAL ENGINEERINGELECTRONIC, OPTICAL AND MAGNETIC MATERIALSELECTRICAL AND ELECTRONIC ENGINEER ??
ID Code:
58579
Deposited By:
Deposited On:
29 Oct 2012 16:29
Refereed?:
Yes
Published?:
Published
Last Modified:
20 Sep 2023 00:24