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The electrochemical reactivity of amorphous hydrogenated carbon nitrides for varying nitrogen contents: the role of the substrate

Adamopoulos, George (2003) The electrochemical reactivity of amorphous hydrogenated carbon nitrides for varying nitrogen contents: the role of the substrate. DIAMOND AND RELATED MATERIALS, 12 (3-7). pp. 613-617. ISSN 0925-9635

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Abstract

A series of hydrogenated carbon nitride films have been deposited on titanium and n-type highly doped (1 0 0) silicon substrates by the integrated distributed electron cyclotron resonance reactor from acetylene and nitrogen gas mixtures. It has been found that for nitrogen content between 5 and 25% the electrical conductivity and the electrochemical reactivity, for an outer sphere reaction such as that due to the ferri-ferrocyanide system, varies in opposite directions. In addition the overall kinetic behaviour of the same system, looking similar to that of a simple electron transfer with a partial mass transfer in solution, contains another contribution. This can be explained by the presence of a more resistive layer within the carbon film and close to the solution, where electronic transport would occur by hopping between a large number of localised states. Finally, in contrast to the silicon substrate which introduces a resistive layer resulting in an additional potential drop, titanium seems to be a more promising substrate because of the negligibility of the latter effect.

Item Type: Article
Journal or Publication Title: DIAMOND AND RELATED MATERIALS
Uncontrolled Keywords: carbon nitride films ; electrochemical properties ; ECR deposition
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Departments: Faculty of Science and Technology > Engineering
ID Code: 58578
Deposited By: ep_importer_pure
Deposited On: 29 Oct 2012 16:19
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:33
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/58578

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