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Evidence for spin memory in the electron phase coherence in graphene

Kozikov, A A and Horsell, D W and McCann, Edward and Falko, Vladimir (2012) Evidence for spin memory in the electron phase coherence in graphene. Physical Review B, 86 (4). ISSN 1550-235X

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    We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature, and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magneticlike defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

    Item Type: Journal Article
    Journal or Publication Title: Physical Review B
    Additional Information: ©2012 American Physical Society
    Uncontrolled Keywords: graphene
    Subjects: ?? qc ??
    Departments: Faculty of Science and Technology > Physics
    ID Code: 57833
    Deposited By: ep_importer_pure
    Deposited On: 28 Aug 2012 13:54
    Refereed?: Yes
    Published?: Published
    Last Modified: 18 Jun 2018 00:19
    Identification Number:

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