Adamopoulos, George and Bashir, Aneeqa and Wöbkenberg, Paul H. and Bradley, Donal D. C. and Anthopoulos, Thomas D. (2009) Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air. Applied Physics Letters, 95 (13). ISSN 0003-6951Full text not available from this repository.
We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n-channel characteristics with electron mobility in the range 10-22 cm(2)/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.
|Journal or Publication Title:||Applied Physics Letters|
|Uncontrolled Keywords:||HIN-FILM-TRANSISTOR ; OXIDE SEMICONDUCTOR|
|Subjects:||?? ta ??|
|Departments:||Faculty of Science and Technology > Engineering|
|Deposited On:||22 Aug 2012 14:29|
|Last Modified:||26 Apr 2017 03:26|
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