Adamopoulos, George and Bashir, Aneeqa and Wöbkenberg, Paul H. and Bradley, Donal D. C. and Anthopoulos, Thomas D. (2009) Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air. Applied Physics Letters, 95 (13). ISSN 0003-6951
Full text not available from this repository.Abstract
We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n-channel characteristics with electron mobility in the range 10-22 cm(2)/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Applied Physics Letters |
| Uncontrolled Keywords: | HIN-FILM-TRANSISTOR ; OXIDE SEMICONDUCTOR |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Departments: | Faculty of Science and Technology > Engineering |
| ID Code: | 57781 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 22 Aug 2012 14:29 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 28 Sep 2012 16:54 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/57781 |
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