Adamopoulos, George and Thomas, Stuart and Woebkenberg, Paul H. and Bradley, Donal D. C. and McLachlan, Martyn A. and Anthopoulos, Thomas D. (2011) High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air. Advanced Materials, 23 (16). pp. 1894-1898. ISSN 0935-9648
Full text not available from this repository.Official URL: http://dx.doi.org/10.1002/adma.201003935
Abstract
Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Advanced Materials |
| Uncontrolled Keywords: | oxide transistors ; ZnO ; high-k dielectrics ; spray pyrolysis |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Departments: | Faculty of Science and Technology > Engineering |
| ID Code: | 57655 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 20 Aug 2012 09:00 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 24 Oct 2012 11:12 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/57655 |
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