Lancaster EPrints

High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

Adamopoulos, George and Thomas, Stuart and Woebkenberg, Paul H. and Bradley, Donal D. C. and McLachlan, Martyn A. and Anthopoulos, Thomas D. (2011) High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air. Advanced Materials, 23 (16). pp. 1894-1898. ISSN 0935-9648

Full text not available from this repository.

Abstract

Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).

Item Type: Article
Journal or Publication Title: Advanced Materials
Uncontrolled Keywords: oxide transistors ; ZnO ; high-k dielectrics ; spray pyrolysis
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Departments: Faculty of Science and Technology > Engineering
ID Code: 57655
Deposited By: ep_importer_pure
Deposited On: 20 Aug 2012 09:00
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:31
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/57655

Actions (login required)

View Item