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Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)

Smith, Jeremy and Bashir, Aneeqa and Adamopoulos, George and Anthony, John E. and Bradley, Donal D. C. and Hamilton, R. and Heeney, Martin and McCulloch, Iain and Anthopoulos, Thomas D. (2010) Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1). Advanced Materials, 22 (32). pp. 3598-3602. ISSN 0935-9648

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Abstract

An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

Item Type: Article
Journal or Publication Title: Advanced Materials
Uncontrolled Keywords: hybrid circuits ; hybrid transistors ; organic transistors ; metal oxide semiconductors
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Departments: Faculty of Science and Technology > Engineering
ID Code: 57654
Deposited By: ep_importer_pure
Deposited On: 20 Aug 2012 09:03
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:31
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/57654

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