Adamopoulos, George and Thomas, Stuart and Bradley, Donal D. C. and McLachlan, Martyn A. and Anthopoulos, Thomas D. (2011) Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air. Applied Physics Letters, 98 (12). -. ISSN 0003-6951
Full text not available from this repository.Abstract
We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Applied Physics Letters |
| Uncontrolled Keywords: | ALUMINUM-OXIDE FILMS ; CHEMICAL-VAPOR-DEPOSITION ; ATOMIC LAYER DEPOSITION ; GATE DIELECTRICS ; ELECTRICAL-PROPERTIES ; Transparent Electronics |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Departments: | Faculty of Science and Technology > Engineering |
| ID Code: | 57651 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 20 Aug 2012 08:57 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 24 Oct 2012 11:11 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/57651 |
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