Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

Adamopoulos, George and Thomas, Stuart and Bradley, Donal D. C. and McLachlan, Martyn A. and Anthopoulos, Thomas D. (2011) Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air. Applied Physics Letters, 98 (12). -. ISSN 0003-6951

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Abstract

We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/ta
Subjects:
?? ALUMINUM-OXIDE FILMSCHEMICAL-VAPOR-DEPOSITIONATOMIC LAYER DEPOSITIONGATE DIELECTRICSELECTRICAL-PROPERTIESTRANSPARENT ELECTRONICS ENGINEERINGPHYSICS AND ASTRONOMY (MISCELLANEOUS)TA ENGINEERING (GENERAL). CIVIL ENGINEERING (GENERAL) ??
ID Code:
57651
Deposited By:
Deposited On:
20 Aug 2012 07:57
Refereed?:
Yes
Published?:
Published
Last Modified:
17 Sep 2023 01:11