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Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

Adamopoulos, George and Thomas, Stuart and Bradley, Donal D. C. and McLachlan, Martyn A. and Anthopoulos, Thomas D. (2011) Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air. Applied Physics Letters, 98 (12). -. ISSN 0003-6951

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Abstract

We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm(2)/V s and current on/off ratio on the order of 10(5). This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.

Item Type: Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: ALUMINUM-OXIDE FILMS ; CHEMICAL-VAPOR-DEPOSITION ; ATOMIC LAYER DEPOSITION ; GATE DIELECTRICS ; ELECTRICAL-PROPERTIES ; Transparent Electronics
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Departments: Faculty of Science and Technology > Engineering
ID Code: 57651
Deposited By: ep_importer_pure
Deposited On: 20 Aug 2012 08:57
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:31
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/57651

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