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Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy

Huey, B. D. and Langford, R. M. and Briggs, G. Andrew D. and Kolosov, Oleg (2001) Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy. In: Microscopy of Semiconducting Materials 2001. IOP Publishing Ltd, Bristol, pp. 531-534. ISBN 0-7503-0818-4

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Abstract

Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique.

Item Type: Contribution in Book/Report/Proceedings
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 57457
Deposited By: ep_importer_pure
Deposited On: 09 Oct 2012 15:24
Refereed?: No
Published?: Published
Last Modified: 10 Apr 2014 01:24
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/57457

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