Kolosov, Oleg and Castell, Martin R. and Marsh, Chris D. and Briggs, G. Andrew D. and Kamins, T. I. and Williams, R. Stanley (1998) Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy. Physical review letters, 81 (5). pp. 1046-1049. ISSN 0031-9007Full text not available from this repository.
The structure of nanometer-sized strained Ce islands epitaxially grown on a Si substrate was studied using ultrasonic force microscopy (UFM), which combines the sensitivity to elastic structure of acoustic microscopy with the nanoscale spatial resolution of atomic force microscopy. UFM not only images the local surface elasticity variations between the Ge dots and the substrate with a spatial resolution of about 5 nm, but is also capable of detecting the strain variation across the dot, via the modification of the local stiffness.
|Journal or Publication Title:||Physical review letters|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||07 Oct 2012 17:04|
|Last Modified:||07 Aug 2015 09:00|
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