Falko, Vladimir (1990) Longitudinal magnetoresistance of ultrathin films and two-dimensional electron layers. Journal of Physics: Condensed Matter, 2 (16). pp. 3797-3802. ISSN 0953-8984Full text not available from this repository.
A method of calculating the longitudinal magnetoresistance of ultrathin films or inversion layers in MOS structures with sufficient size quantisation of transverse electron motion is proposed within the framework of the theory of weak localisation. The cases when a single subband and several subbands of size quantisation are filled are discussed. It is shown that in all studied cases the magnetoresistance is negative and depends on the ratio H2/T, so that it can be distinguished experimentally from the H/T-dependences of electron-electron interaction corrections to conductivity. Extension of the obtained results to the magnetoresistance calculation of quasi-1D channel is also discussed.
|Journal or Publication Title:||Journal of Physics: Condensed Matter|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||05 Sep 2012 18:06|
|Last Modified:||04 Oct 2016 01:20|
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