Falko, Vladimir (1993) INTERSUBBAND RELAXATION OF 2-DIMENSIONAL ELECTRONS IN HETEROSTRUCTURES. Physical Review B, 47 (20). pp. 13585-13589. ISSN 0163-1829Full text not available from this repository.
We calculate the lifetime of a nonequilibrium electron in the first excited subband in the low-density heterostructure where this photocreated carrier occurs at the last stage of its cooling. The electron interaction with acoustic phonons gives the dominant intersubband relaxation mechanism, if the intersubband energy splitting and the Fermi energy splitting are relatively small, 1 > epsilon(f)/DELTA10 > 0.7-0.8. In GaAs-AlxGa1-xAs heterostructures the intersubband relaxation determines the excited-electron lifetime to be of the order of tau(phon) approximately nanoseconds which depends slightly on the value of the two-dimensional electron density. When the ratio epsilon(F)/DELTA10 is smaller, the intersubband relaxation is determined by the Auger-like electron-electron scattering whose rate can increase up to the value tau(Aug)-1 approximately 10(10) sec-1.
|Journal or Publication Title:||Physical Review B|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||05 Sep 2012 17:47|
|Last Modified:||05 Sep 2012 17:47|
Actions (login required)