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Intersubband relaxation of two-dimensional electrons in heterostructures

Falko, Vladimir (1993) Intersubband relaxation of two-dimensional electrons in heterostructures. Physical Review B, 47 (20). pp. 13585-13589. ISSN 0163-1829

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    We calculate the lifetime of a nonequilibrium electron in the first excited subband in the low-density heterostructure where this photocreated carrier occurs at the last stage of its cooling. The electron interaction with acoustic phonons gives the dominant intersubband relaxation mechanism, if the intersubband energy splitting and the Fermi energy splitting are relatively small, 1 > epsilon(f)/DELTA10 > 0.7-0.8. In GaAs-AlxGa1-xAs heterostructures the intersubband relaxation determines the excited-electron lifetime to be of the order of tau(phon) approximately nanoseconds which depends slightly on the value of the two-dimensional electron density. When the ratio epsilon(F)/DELTA10 is smaller, the intersubband relaxation is determined by the Auger-like electron-electron scattering whose rate can increase up to the value tau(Aug)-1 approximately 10(10) sec-1.

    Item Type: Journal Article
    Journal or Publication Title: Physical Review B
    Additional Information: © 1993 The American Physical Society
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 57090
    Deposited By: ep_importer_pure
    Deposited On: 05 Sep 2012 17:47
    Refereed?: Yes
    Published?: Published
    Last Modified: 01 Jan 2018 05:53
    Identification Number:

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