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Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures

Konemann, J and Konig, P and Schmidt, T and McCann, E and Falko, Vladimir and Haug, R J (2001) Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures. Physical Review B, 64 (15). -. ISSN 0163-1829

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Abstract

Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of single-particle wave functions. In a quantitative theory correlation functions are calculated. By comparing the experimental and theoretical correlation functions, the effective dimensionality of the emitter is analyzed and the dependence of the inelastic lifetime on energy is extracted.

Item Type: Article
Journal or Publication Title: Physical Review B
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 57045
Deposited By: ep_importer_pure
Deposited On: 31 Aug 2012 11:55
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 23:58
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/57045

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