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Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Nowozin, T. and Marent, A. and Bonato, L. and Schliwa, A. and Bimberg, D. and Smakman, E. P. and Garleff, J. K. and Koenraad, P. M. and Young, R. J. and Hayne, M. (2012) Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots. Physical review b, 86 (3). -. ISSN 1098-0121

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    Abstract

    We present structural, electrical, and theoretical investigations of self-assembled type-II GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional scanning tunneling microscopy (X-STM) the morphology of the QDs is determined. The QDs are of high purity (similar to 100% GaSb content) and have most likely the shape of a truncated pyramid. The average heights of the QDs are 4-6 nm with average base lengths between 9 and 14 nm. Samples with a QD layer embedded into a pn-diode structure are studied with deep-level transient spectroscopy (DLTS), yielding a hole localization energy in the QDs of 609 meV. Based on the X-STM results the electronic structure of the QDs is calculated using 8-band k.p theory. The theoretical localization energies are found to be in good agreement with the DLTS results. Our results also allow us to estimate how variations in size and shape of the dots influence the hole localization energy.

    Item Type: Article
    Journal or Publication Title: Physical review b
    Additional Information: ©2012 American Physical Society
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 56962
    Deposited By: ep_importer_pure
    Deposited On: 14 Aug 2012 10:13
    Refereed?: Yes
    Published?: Published
    Last Modified: 09 Apr 2014 23:58
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/56962

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