Krier, A and Labadi, Z and Richardson, J (1998) Rapid slider LPE growth of InAs quantum wells. IEE PROCEEDINGS-OPTOELECTRONICS, 145 (5). pp. 297-301. ISSN 1350-2433Full text not available from this repository.
The authors report the successful growth of InAs quantum wells from the liquid phase using liquid phase epitaxy (LPE). They demonstrate the capacity of a modified rapid slider LPE technique for the growth of InAs layers in the thickness range below the electron de Broglie wavelength. InAs quantum wells 2.5nm in thickness have been grown with excellent interface quality and thickness uniformity comparable to molecular beam or vapour phase techniques such as MBE or MOVPE. InAs quantum wells were grown closely lattice-matched to InAsSbP quaternary alloy confining layers having a much wider energy bandgap (0.5eV). These quantum wells embedded between proper lattice-matched confining layers with a wider bandgap form the key element of a promising structure for the fabrication of mid-infrared LEDs and lasers based on InAs quantum wells. Some basic characteristics of the kinetics of InAs heteroepitaxy on InAsSbP quaternary surfaces are reported and the extent to which the main experimental parameters control the resulting layer thickness is determined.
|Journal or Publication Title:||IEE PROCEEDINGS-OPTOELECTRONICS|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||13 Aug 2012 13:03|
|Last Modified:||13 Aug 2012 13:03|
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