Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer

Krier, A and Chubb, D and Krier, S E and Hopkinson, M and Hill, G (1998) Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer. IEE Proceedings - Optoelectronics, 145 (5). pp. 292-296. ISSN 1350-2433

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Abstract

Light emitting diodes (LEDs) and lasers operating in the 2 to 3 mu m spectral region at room temperature are been demonstrated. The devices were fabricated from InxGa1-xAs/InAsyP1-y double heterostructures grown on n-type InP (100) substrates by molecular beam epitaxy. A strain relaxed buffer layer which incorporates composition reversals was used to reduce the threading dislocation density and to accommodate the large lattice mismatch (up to 2.7%) between the InP substrate and the device active region. Efficient electroluminescence emission at wavelengths between 2 and 3 mu m was obtained from the LEDs at room temperature, while diode lasers exhibited coherent emission in the range 2-2.6 mu m at temperatures up to 130 K. For one of the LEDs a characteristic absorption was readily observed at 2.7 mu m in the diode electroluminescence emission spectrum, corresponding to strong water vapour absorption in the atmosphere. These devices could easily form the key component of an infrared gas sensor for water vapour detection and monitoring at 2.7 mu m in a variety of different applications.

Item Type:
Journal Article
Journal or Publication Title:
IEE Proceedings - Optoelectronics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
?? PHYSICSATOMIC AND MOLECULAR PHYSICS, AND OPTICSCOMPUTER NETWORKS AND COMMUNICATIONSELECTRICAL AND ELECTRONIC ENGINEERINGQC PHYSICS ??
ID Code:
56609
Deposited By:
Deposited On:
13 Aug 2012 11:05
Refereed?:
Yes
Published?:
Published
Last Modified:
17 Sep 2023 01:09