Krier, A and Labadi, Z and Hammiche, A (1999) InAsSbP quantum dots grown by liquid phase epitaxy. Journal of Physics D: Applied Physics, 32 (20). pp. 2587-2589. ISSN 0022-3727Full text not available from this repository.
We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.
|Journal or Publication Title:||Journal of Physics D: Applied Physics|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
Faculty of Science and Technology > Lancaster Environment Centre
|Deposited On:||09 Aug 2012 12:58|
|Last Modified:||24 Jul 2015 01:40|
Actions (login required)