Krier, A and Labadi, Z and Hammiche, A (1999) InAsSbP quantum dots grown by liquid phase epitaxy. Journal of Physics D: Applied Physics, 32 (20). pp. 2587-2589. ISSN 0022-3727
Full text not available from this repository.Official URL: http://dx.doi.org/10.1088/0022-3727/32/20/301
Abstract
We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Journal of Physics D: Applied Physics |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics Faculty of Science and Technology > Lancaster Environment Centre |
| ID Code: | 56602 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 09 Aug 2012 12:58 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2017 02:56 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/56602 |
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