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Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

Krier, A and Huang, X L (2002) Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. In: Physics and Simulation of Optoelectronic Devices X. SPIE-INT SOC OPTICAL ENGINEERING, Bellingham, Wash., pp. 70-78. ISBN 0-8194-4385-9

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Abstract

Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.

Item Type: Contribution in Book/Report/Proceedings
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 56597
Deposited By: ep_importer_pure
Deposited On: 09 Aug 2012 12:54
Refereed?: No
Published?: Published
Last Modified: 10 Apr 2014 01:18
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/56597

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