Krier, A and Huang, X L (2002) Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. In: Physics and Simulation of Optoelectronic Devices X. SPIE-INT SOC OPTICAL ENGINEERING, Bellingham, Wash., pp. 70-78. ISBN 0-8194-4385-9Full text not available from this repository.
Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.
|Item Type:||Contribution in Book/Report/Proceedings|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||09 Aug 2012 12:54|
|Last Modified:||10 Apr 2014 01:18|
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