Chakrabarti, P and Krier, A and Huang, X L and Fenge, P and Lal, R K (2003) Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application. In: PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. IEEE, NEW YORK, pp. 87-92. ISBN 0-7803-7824-5Full text not available from this repository.
An InAsSb p(+)-n junction photodetector grown on InAs substrate by Liquid Phase Epitaxy has been modeled and characterized. The results obtained on the basis of the model are compared and contrasted with experimentally measure values. Both electrical and optical characterisation of the device has been carried out for exploring the application potential of the device in absorption spectroscopy based gas sensors. The model enables one to explain the various mechanisms that shape the characteristics of the device under actual operating condition. It can also be used as a tool for optimizing the detector.
|Item Type:||Contribution in Book/Report/Proceedings|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||09 Aug 2012 12:52|
|Last Modified:||10 Apr 2014 01:18|
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