Nohavica, D and Krier, A (2004) Structural modifications of InAs based materials for mid-infrared optoelectronic devices. In: ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. IEEE, New York, pp. 203-206. ISBN 0-7803-8535-7Full text not available from this repository.
Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarboxylic acids are very interesting as structural and selective etchants and Br-2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.
|Item Type:||Contribution in Book/Report/Proceedings|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||09 Aug 2012 12:50|
|Last Modified:||11 Dec 2016 03:05|
Actions (login required)