DAgostino, S and Paoloni, C (1997) Experimental validation of a large-signal MESFET model for submicron-gate-length devices. Microwave and Optical Technology Letters, 15 (4). pp. 227-229. ISSN 0895-2477Full text not available from this repository.
The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.
|Journal or Publication Title:||Microwave and Optical Technology Letters|
|Uncontrolled Keywords:||MMIC ; MESFET ; modeling|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)|
|Departments:||Faculty of Science and Technology > Engineering|
|Deposited On:||08 Aug 2012 19:28|
|Last Modified:||24 Jan 2014 05:29|
Actions (login required)