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An HBT unilateral model to design distributed amplifiers

Paoloni, C and D'Agostino, S (1999) An HBT unilateral model to design distributed amplifiers. IEEE Transactions on Microwave Theory and Techniques, 47 (6). pp. 795-798. ISSN 0018-9480

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Abstract

A novel heterojunction bipolar transistor (HBT) unilateral model oriented to a fast prediction of the performance of HBT monolithic-microwave integrated-circuit distributed amplifiers is proposed. The HBT unilateral model includes, by simple expressions, the effects caused by the HBT parasitics. A graphical design procedure for HBT distributed amplifiers is also proposed. This method is based on a set of generalized charts and represents a simple and fast design tool for designers. Comparisons between the performance of specially designed HBT distributed amplifiers and the results obtained using the HBT unilateral model demonstrate the validity of the proposed approach.

Item Type: Article
Journal or Publication Title: IEEE Transactions on Microwave Theory and Techniques
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Departments: Faculty of Science and Technology > Engineering
ID Code: 56561
Deposited By: ep_importer_pure
Deposited On: 08 Aug 2012 19:21
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 23:54
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/56561

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