Paoloni, C (2000) A simplified procedure to calculate the power gain definitions of FET's. IEEE Transactions on Microwave Theory and Techniques, 48 (3). pp. 470-474. ISSN 0018-9480Full text not available from this repository.
A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.
|Journal or Publication Title:||IEEE Transactions on Microwave Theory and Techniques|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)|
|Departments:||Faculty of Science and Technology > Engineering|
|Deposited On:||08 Aug 2012 19:18|
|Last Modified:||26 Oct 2016 05:26|
Actions (login required)