Paoloni, C (2000) A simplified procedure to calculate the power gain definitions of FET's. IEEE Transactions on Microwave Theory and Techniques, 48 (3). pp. 470-474. ISSN 0018-9480
Full text not available from this repository.Abstract
A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | IEEE Transactions on Microwave Theory and Techniques |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Departments: | Faculty of Science and Technology > Engineering |
| ID Code: | 56559 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 08 Aug 2012 19:18 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 17 Aug 2012 09:00 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/56559 |
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