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A simplified procedure to calculate the power gain definitions of FET's

Paoloni, C (2000) A simplified procedure to calculate the power gain definitions of FET's. IEEE Transactions on Microwave Theory and Techniques, 48 (3). pp. 470-474. ISSN 0018-9480

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Abstract

A graphical method to easily derive the power gain definitions of field-effect transistors (FET's) is proposed in this paper. This method is applicable to MESFET's and high electron-mobility transistors described by the typical pi-model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains, The accuracy of this approach has been proven by comparison with simulations of the FET complete model.

Item Type: Article
Journal or Publication Title: IEEE Transactions on Microwave Theory and Techniques
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Departments: Faculty of Science and Technology > Engineering
ID Code: 56559
Deposited By: ep_importer_pure
Deposited On: 08 Aug 2012 19:18
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 23:54
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/56559

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