Paoloni, C (2000) HEMT-HBT matrix amplifier. IEEE Transactions on Microwave Theory and Techniques, 48 (8). pp. 1308-1312. ISSN 0018-9480Full text not available from this repository.
A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.
|Journal or Publication Title:||IEEE Transactions on Microwave Theory and Techniques|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)|
|Departments:||Faculty of Science and Technology > Engineering|
|Deposited On:||08 Aug 2012 19:12|
|Last Modified:||24 Jan 2017 03:20|
Actions (login required)