Paoloni, C (2000) HEMT-HBT matrix amplifier. IEEE Transactions on Microwave Theory and Techniques, 48 (8). pp. 1308-1312. ISSN 0018-9480
Full text not available from this repository.Abstract
A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | IEEE Transactions on Microwave Theory and Techniques |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Departments: | Faculty of Science and Technology > Engineering |
| ID Code: | 56555 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 08 Aug 2012 19:12 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 13 Aug 2012 12:11 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/56555 |
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