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HEMT-HBT matrix amplifier

Paoloni, C (2000) HEMT-HBT matrix amplifier. IEEE Transactions on Microwave Theory and Techniques, 48 (8). pp. 1308-1312. ISSN 0018-9480

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Abstract

A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.

Item Type: Article
Journal or Publication Title: IEEE Transactions on Microwave Theory and Techniques
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Departments: Faculty of Science and Technology > Engineering
ID Code: 56555
Deposited By: ep_importer_pure
Deposited On: 08 Aug 2012 19:12
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 23:54
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/56555

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