Smirnov, V. M. and Batty, P. J. and Krier, A. and Jones, Robert (2007) Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918. In: Quantum Sensing and Nanophotonic Devices IV. SPIE-INT SOC OPTICAL ENGINEERING, BELLINGHAM, p. 47918. ISBN 978-0-8194-6592-4Full text not available from this repository.
GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homejunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 mu m at room temperature was observed.
|Item Type:||Contribution in Book/Report/Proceedings|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Lancaster Environment Centre|
Faculty of Science and Technology > Physics
|Deposited On:||07 Aug 2012 11:26|
|Last Modified:||07 Jan 2015 21:35|
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