Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

Cheetham, K. J. and Carrington, P. J. and Krier, A. and Patel, I. I. and Martin, F. L. (2012) Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb. Semiconductor Science and Technology, 27 (1). -. ISSN 0268-1242

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Abstract

The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time. Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs- and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.

Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
?? PHYSICSMATERIALS CHEMISTRYELECTRONIC, OPTICAL AND MAGNETIC MATERIALSELECTRICAL AND ELECTRONIC ENGINEERINGCONDENSED MATTER PHYSICSQC PHYSICS ??
ID Code:
56511
Deposited By:
Deposited On:
07 Aug 2012 09:08
Refereed?:
Yes
Published?:
Published
Last Modified:
18 Sep 2023 00:34