Cheetham, K. J. and Carrington, P. J. and Krier, A. and Patel, I. I. and Martin, F. L. (2012) Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb. Semiconductor Science and Technology, 27 (1). -. ISSN 0268-1242Full text not available from this repository.
The Raman spectra of pentanary GaInAsSbP alloys are reported for the first time. Measurements were performed at room temperature on epilayers which were grown using liquid phase epitaxy outside of the miscibility gap and nominally lattice matched to (1 0 0) InAs and GaSb. The dominant phonon peaks in the spectra are identified and attributed to InSb-, InP-, GaAs- and (GaSb+InAs)-like phonons, along with disorder-activated phonons. No GaP-like phonons were observed. Further peaks were also attributed to disorder-activated optical and longitudinal acoustic phonons, associated with alloy disorder effects.
|Journal or Publication Title:||Semiconductor Science and Technology|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
Faculty of Science and Technology > Lancaster Environment Centre
|Deposited On:||07 Aug 2012 10:08|
|Last Modified:||07 Jan 2015 17:42|
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