Young, Robert J. and Mereni, Lorenzo O. and Petkov, Nikolay and Knight, Gabrielle R. and Dimastrodonato, Valeria and Hurley, Paul K. and Hughes, Greg and Pelucchi, Emanuele (2010) Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. JOURNAL OF CRYSTAL GROWTH, 312 (9). pp. 1546-1550. ISSN 0022-0248
Full text not available from this repository.Abstract
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0 degrees, 0.2 degrees, 0.4 degrees and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of similar to 4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to mu similar to 3.5 x 10(4) cm(2)/V s with an electron concentration of similar to 1 x 10(16).
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 54907 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 06 Jun 2012 14:05 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 20:31 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/54907 |
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