Tan, C. H. and Goh, Y. L. and Marshall, A. R. J. and Tan, L. J. J. and Ng, J. S. and David, J. P. R. (2007) Extremely low excess noise InAlAs avalanche photodiodes. In: 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. IEEE, Matsue, pp. 81-83. ISBN 978-1-4244-0874-0
Full text not available from this repository.Abstract
Excess noise factors < 4 at avalanche gain of 10 measured on a series of p(+)in(+) InAlAs diodes with avalanche regions ranging from 0.11 mu m to 2.53 mu m. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics of these diodes showed a linear dependence of breakdown voltage on the avalanche width. Using tunnelling parameters derived from current-voltage' measurements with the ionization coefficients and threshold energies derived from gain and excess noise measurements, our calculations showed that InAlAs avalanche photodiodes have sensitivities of similar to 28.8dBm assuming a rather high pre-amplifier noise of 15pAHz(-1/2).