Goh, Y. L. and Marshall, A. R. J. and Massey, D. J. and Ng, J. S. and Tan, C. H. and Hopkinson, M. and David, J. P. R. and Jones, S. K. and Button, C. C. and Pinches, S. M. (2007) Excess avalanche noise in In0.52Al0.48As. IEEE Journal of Quantum Electronics, 43 (5-6). pp. 503-507. ISSN 0018-9197Full text not available from this repository.
Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.
|Journal or Publication Title:||IEEE Journal of Quantum Electronics|
|Subjects:||?? qc ??|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||28 May 2012 11:57|
|Last Modified:||26 Apr 2017 03:09|
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