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A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications.

Marshall, A. R. J. and Goh, Y. L. and Tan, L. J. J. and Tan, C. H. and Ng, J. S. and David, J. P. R. (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. In: 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. IEEE, New York, pp. 789-790. ISBN 978-0-7803-9555-8

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Abstract

In this work newly derived non-local ionization coefficients covering the required high field range have been used, together with a random path length model, to accurately evaluate multiplication and excess noise in both InP and InAlAs multiplication regions. The multiplication of both the intentionally injected photocurrent and the tunneling current has been modeled. A range of APD multiplication widths have been evaluated and APD performance has been combined with a modeled receiver front end, to interpret the results in terms of receiver sensitivity.

Item Type: Contribution in Book/Report/Proceedings
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 54609
Deposited By: ep_importer_pure
Deposited On: 28 May 2012 12:02
Refereed?: No
Published?: Published
Last Modified: 10 Apr 2014 01:09
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/54609

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