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Excess noise and avalanche multiplication in InAlAs

Goh, Y. L. and Massey, D. J. and Marshall, A. R. J. and Ng, J. S. and Tan, C. H. and Hopkinson, M. and David, J. P. R. (2006) Excess noise and avalanche multiplication in InAlAs. In: 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2. IEEE, New York, pp. 787-788. ISBN 978-0-7803-9555-8

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Abstract

We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique.

Item Type: Contribution in Book/Report/Proceedings
Subjects: UNSPECIFIED
Departments: Faculty of Science and Technology > Physics
ID Code: 54608
Deposited By: ep_importer_pure
Deposited On: 28 May 2012 12:04
Refereed?: No
Published?: Published
Last Modified: 10 Apr 2014 01:09
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/54608

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