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Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

Nunna, Kalyan Chakravarthy and Tan, Siew Li and Reyner, Charles J. and Marshall, Andrew Robert Julian and Liang, Baolai and Jallipalli, Anitha and David, John P. R. and Huffaker, Diana L. (2012) Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique. Ieee photonics technology letters, 24 (3). pp. 218-220. ISSN 1041-1135

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Abstract

We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-mu m wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Omega cm(2) and a room temperature peak responsivity of 0.8 A/W (at 2 mu m) with an estimated maximum detectivity (D*) of similar to 3.8x10(10) cm Hz(1/2) W-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.

Item Type: Article
Journal or Publication Title: Ieee photonics technology letters
Uncontrolled Keywords: 2-$mu{rm m}$-photodetectors ; GaInAsSb ; GaSb on GaAs ; InGaAsSb ; PIN photodiodes ; infrared photodetectors ; interfacial misfit arrays ; short-wave infrared
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 54597
Deposited By: ep_importer_pure
Deposited On: 28 May 2012 11:24
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:27
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/54597

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