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Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

Green, James E. and Loh, Wei Sun and Marshall, Andrew R. J. and Ng, Beng Koon and Tozer, Richard C. and David, John P. R. and Soloviev, Stanislav I. and Sandvik, Peter M. (2012) Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices, 59 (4). pp. 1030-1036. ISSN 0018-9383

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Abstract

Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 mu m, respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient alpha from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient a at low fields. The more readily ionizing hole coefficient beta remains very similar to prior work.

Item Type: Article
Journal or Publication Title: IEEE Transactions on Electron Devices
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 54595
Deposited By: ep_importer_pure
Deposited On: 28 May 2012 11:16
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 23:32
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/54595

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