Hayne, Manus and USHER, A and HARRIS, J J and FOXON, C T (1992) Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. Physical Review B, 46 (15). pp. 9515-9519. ISSN 0163-1829
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Official URL: http://dx.doi.org/10.1103/PhysRevB.46.9515
Abstract
Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Physical Review B |
| Additional Information: | © 1992 The American Physical Society |
| Subjects: | Q Science > QC Physics |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 54551 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 25 May 2012 14:15 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 20:27 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/54551 |
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