Hayne, Manus and USHER, A and HARRIS, J J and FOXON, C T (1992) Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. Physical Review B, 46 (15). pp. 9515-9519. ISSN 0163-1829
Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.
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