Lancaster EPrints

Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

Hayne, Manus and USHER, A and HARRIS, J J and FOXON, C T (1992) Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. Physical Review B, 46 (15). pp. 9515-9519. ISSN 0163-1829

[img]
Preview
PDF - Published Version
Download (433Kb) | Preview

    Abstract

    Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

    Item Type: Article
    Journal or Publication Title: Physical Review B
    Additional Information: © 1992 The American Physical Society
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 54551
    Deposited By: ep_importer_pure
    Deposited On: 25 May 2012 14:15
    Refereed?: Yes
    Published?: Published
    Last Modified: 09 Apr 2014 23:32
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/54551

    Actions (login required)

    View Item