Greally, M G and Hayne, M and Usher, A and Hill, G and Hopkinson, M (1996) Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions. Journal of Applied Physics, 79 (11). pp. 8465-8469. ISSN 0021-8979Full text not available from this repository.
We report an investigation of the scattering mechanisms affecting the two-dimensional electron system in modulation-doped Ga0.47In0.53As-Al0.48In0.52As single heterojunctions. Low-temperature magnetotransport measurements were used to determine the dependence of the electron mobility mu on the density N-s of the two-dimensional carriers. For N-s less than or equal to 4 X 10(11) cm(-2), we find that mu increases with N-s, leveling off as N-s is further increased. This behavior is a clear indication that, contrary to some theoretical predictions, mu is chiefly limited by ionized-impurity scattering in this regime. We develop a theoretical model of the scattering mechanisms present in our systems whose results agree with our experiments. We find that alloy and interface-roughness scattering become important only when N-s greater than or equal to 5 X 10(11) cm(-2). (C) 1996 American Institute of Physics.
|Journal or Publication Title:||Journal of Applied Physics|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||25 May 2012 10:55|
|Last Modified:||18 Jun 2015 05:54|
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