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GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

Smakman, E. P. and Garleff, J. K. and Young, R. J. and Hayne, M. and Rambabu, P. and Koenraad, P. M. (2012) GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. Applied Physics Letters, 100 (14). -. ISSN 0003-6951

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    Abstract

    We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701614]

    Item Type: Article
    Journal or Publication Title: Applied Physics Letters
    Additional Information: © 2012 American Institute of Physics
    Subjects: Q Science > QC Physics
    Departments: Faculty of Science and Technology > Physics
    ID Code: 54015
    Deposited By: ep_importer_pure
    Deposited On: 04 May 2012 16:01
    Refereed?: Yes
    Published?: Published
    Last Modified: 05 Sep 2014 18:09
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/54015

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