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Effect of matrix on InAs self-organized nanostructures on InP substrate

Zhuang, Qiandong and Yoon, S. F. and Zheng, H. Q. (2000) Effect of matrix on InAs self-organized nanostructures on InP substrate. In: Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. IEEE, pp. 455-458. ISBN 0780366980

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Abstract

We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in the InAs/InGaAs and InAs/InAlAs system, while quantum dots with bimodal size distribution appeared in the InAs/InP system. The observed drastic modification of nanostructures is attributed to the anisotropic buffer layer surface, and the bimodal size distribution of InAs quantum dots on InP buffer is simply explained by the surface mass transfer.

Item Type: Contribution in Book/Report/Proceedings
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 53147
Deposited By: ep_importer_pure
Deposited On: 09 Mar 2012 03:33
Refereed?: No
Published?: Published
Last Modified: 10 Apr 2014 00:46
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/53147

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