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Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles

BOXALL, C and KELSALL, G H (1992) Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles. Journal of Electroanalytical Chemistry, 328 (1-2). pp. 75-97. ISSN 0022-0728

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Abstract

Some semiconductor particles, such as SnO2 (band gap approximately 3.5 eV), when irradiated with photons of energy greater than the band gap, exhibit changes in electrophoretic mobility. We report experimental data and a second-order kinetic model for the time dependence of photo-induced changes in electrophoretic mobilities of aqueous dispersions of SnO2 particles. All experiments were conducted in the absence of hole and electron scavengers. Comparisons are made between the behaviour, rate constants and quantum yields for surface charge generation found for colloidal SnO2 and those reported previously for TiO2.

Item Type: Article
Journal or Publication Title: Journal of Electroanalytical Chemistry
Subjects: UNSPECIFIED
Departments: Faculty of Science and Technology > Engineering
ID Code: 52705
Deposited By: ep_importer_pure
Deposited On: 05 Mar 2012 11:42
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 23:07
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/52705

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