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An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons

Hayne, M and Usher, Alan and Harris, Jeffrey J and Foxon, C Thomas (1996) An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons. Surface Science, 362 (1-3). pp. 574-578. ISSN 0039-6028

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Abstract

We have measured the persistent changes in the mobility and density of the two-dimensional electron system in two modulation-doped GaAs/AlxGa1-xAs single heterojunctions at 0.3 K following illumination with an infrared light-emitting diode. One sample behaves conventionally, with an immediate increase in both density and mobility when illuminated. However, the second sample shows remarkable different behaviour, with no change in density for more than 20% of the total time taken to reach the maximum density, and an increase in mobility of more than 10% in this initial illumination period. We demonstrate that these results provide very simple and convincing evidence for the negative-charge state of the DX centre.

Item Type: Article
Journal or Publication Title: Surface Science
Uncontrolled Keywords: electrical transport ; electrical transport measurements ; gallium arsenide ; heterojunctions ; photoconductivity ; semiconductor-semiconductor heterostructures ; ALXGA1-XAS ; GAAS
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 52014
Deposited By: ep_importer_pure
Deposited On: 12 Dec 2011 14:41
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 22:57
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/52014

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