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Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Zhuang, Qiandong and Li, J. M. and Li, H. X. and Zeng, Y. P. and Pan, L. and Chen, Y. H. and Kong, M.Y. and Lin, L. Y. (1998) Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. Applied Physics Letters, 73 (25). pp. 3706-3708. ISSN 1077-3118

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Abstract

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Item Type: Article
Journal or Publication Title: Applied Physics Letters
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 51596
Deposited By: ep_importer_pure
Deposited On: 23 Nov 2011 14:38
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 22:53
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/51596

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