Zhuang, Qiandong and Li, J. M. and Li, H. X. and Zeng, Y. P. and Pan, L. and Chen, Y. H. and Kong, M.Y. and Lin, L. Y. (1998) Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. Applied Physics Letters, 73 (25). pp. 3706-3708. ISSN 1077-3118
Full text not available from this repository.Official URL: http://dx.doi.org/10.1063/1.122870
Abstract
Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
| Item Type: | Article |
|---|---|
| Journal or Publication Title: | Applied Physics Letters |
| Subjects: | UNSPECIFIED |
| Departments: | Faculty of Science and Technology > Physics |
| ID Code: | 51596 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 23 Nov 2011 14:38 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 26 Jul 2012 19:54 |
| Identification Number: | |
| URI: | http://eprints.lancs.ac.uk/id/eprint/51596 |
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