Li, Hanxuan and Zhuang, Qiandong and Kong, Xiangwei and Wang, Zhanguo and Daniels-Race, Theda (1999) Self-organization of wire-like InAs nanostructures on InP. Journal of Crystal Growth, 205 (4). pp. 613-617. ISSN 0022-0248Full text not available from this repository.
The initial InAs growth on InP(1 0 0) during molecular beam epitaxy has been investigated. The as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3–6 monolayer InAs deposition range. The wires were oriented along the [View the MathML source 1 0] direction. Transmission electron microscopy images confirm that the wires are coherently grown on the substrates. Our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized InAs nanowires.
|Journal or Publication Title:||Journal of Crystal Growth|
|Uncontrolled Keywords:||Quantum wires ; InAs/InP ; Molecular beam epitaxy ; Self-organization|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||18 Nov 2011 15:05|
|Last Modified:||20 Jan 2017 03:01|
Actions (login required)