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Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

Zhuang, Qiandong and Li, J. M. and Wang, X. X. and Zeng, Y. P. and Wang, Y. T. and Wang, B. Q. and Pan, L. and Wu, J. and Kong, M.Y. and Lin, L. Y. (2000) Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice. Journal of Crystal Growth, 208 (1-4). pp. 791-794. ISSN 0022-0248

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Abstract

Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950°C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750°C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice.

Item Type: Article
Journal or Publication Title: Journal of Crystal Growth
Uncontrolled Keywords: InGaAs/GaAs ; Quantum dots ; Superlattice ; Annealing ; X-ray
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 51503
Deposited By: ep_importer_pure
Deposited On: 18 Nov 2011 12:39
Refereed?: Yes
Published?: Published
Last Modified: 24 Jan 2014 05:23
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/51503

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