Li, H. X. and Zhuang, Qiandong and Wang, Z. G. and Daniels-Race, T. (2000) Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates. Journal of Applied Physics, 87 (1). pp. 188-191. ISSN 0021-8979Full text not available from this repository.
InxGa1−xAs self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. The areal density, distribution, and shapes have been found to be dependent on x. The dot shape changes from a round shape for x=1.0 to an elliptical shape for x⩽0.5. The major axis and minor axis of the elliptical InxGa1−xAs dots are along the [math10] and  directions, respectively. The ordering phenomenon is also discussed. It is suggested that the dot–dot interaction may play important roles in the self-organization process. © 2000 American Institute of Physics.
|Journal or Publication Title:||Journal of Applied Physics|
|Subjects:||Q Science > QC Physics|
|Departments:||Faculty of Science and Technology > Physics|
|Deposited On:||18 Nov 2011 12:11|
|Last Modified:||04 Dec 2016 02:26|
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