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Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates

Li, H. X. and Zhuang, Qiandong and Wang, Z. G. and Daniels-Race, T. (2000) Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates. Journal of Applied Physics, 87 (1). pp. 188-191. ISSN 0021-8979

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Abstract

InxGa1−xAs self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. The areal density, distribution, and shapes have been found to be dependent on x. The dot shape changes from a round shape for x=1.0 to an elliptical shape for x⩽0.5. The major axis and minor axis of the elliptical InxGa1−xAs dots are along the [math10] and [110] directions, respectively. The ordering phenomenon is also discussed. It is suggested that the dot–dot interaction may play important roles in the self-organization process. © 2000 American Institute of Physics.

Item Type: Article
Journal or Publication Title: Journal of Applied Physics
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 51502
Deposited By: ep_importer_pure
Deposited On: 18 Nov 2011 12:11
Refereed?: Yes
Published?: Published
Last Modified: 09 Apr 2014 22:52
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/51502

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